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School of Science and Engineering, Waseda University | 論文
- Noise-bias compensation in physical-parameter system identification under microtremor input
- Silicon Epitaxy by Plasma Dissociation of Silane : C-3: CRYSTAL TECHNOLOGY
- Characteristics of Si Films Grown on Ion Processed Sapphire Substrates by Plasma Dissociation of Silane
- Performance of Spread Spectrum Medical Telemetry System in a Sharing Frequency Band with Current Telemetry System
- MATHEMATICAL EDUCATION TOWARDS THE NEXT CENTURY : Approach to The Ideal Use of Computer
- An Examination of a High Speed Liquid Jet Apparatus : About the Effect Of Convergent Nozzle on Jet
- Analysis and Classification by Geometric Characteristics of Robot Wrist Configuration
- Three Different LR Parsing Algorithms for Phoneme-Context-Dependent HMM-Based Continuous Speech Recognition (Special Issue on Speech and Discourse Processing in Dialogue Systems)
- Finding Edge in Images: a Hierarchical Relaxation Method
- Characteristics of Molecular Beam Epitaxy Grown GaAs Simultaneously Doped with Si and Be
- Damage in the Surface Region of Silicon Produced by Sputter-Etching
- Galvanomagetic Properties in n-InAs at 77 K
- Simple Fabrication of Silicon Nanopyramids for High Performance Field Emitter Array
- Optimum Design of Structures with Regard to Their Vibrational Characteristic : 2nd Report, The Type-1-problems of Structural Elements Having 1-section-freedom and 2-section-freedom
- Simple Process for Buried Nanopyramid Array (BNPA) Fabrication by Means of Dopant Ion Implantation and Dual Wet Etching
- Simple Fabrication of Nanopyramid Array (NPA) on Si Surface by Means of Focused Ion Beam Patterning and Wet Etching
- "Recurrence Equations", An Integrable System(General)
- Optimum Design of Elastic-plastic Column
- Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy
- Electrical Properties of Ge-Doped InSb and InAs on GaAs(111)A Substrate