Characteristics of Molecular Beam Epitaxy Grown GaAs Simultaneously Doped with Si and Be

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概要

• 論文の詳細を見る

• Simultaneous doping (codoping) of n- and p-type impurities in GaAs is investigated using Si and Be as n- and p-type dopants. In highly Si-doped GaAs layers, the electrical activation ratio of Si-donors is much less than unity because of the formation of compensating centers such as antisite Si (Si_<As>), Si-clusters and Ga vacancies (V_<Ga>). Although no enhancement is observed in the electrical activation, it is found that most of these compensating centers disappear as a result of codoping. The integrated photoluminescence intensity in the codoped GaAs layers is much higher than that in the solely Si-doped samples, indicating that simultaneous Si and Be doping decreases the concentration of nonradiative recombination centers created by high Si doping, without lowering the electron concentration.

• 社団法人応用物理学会の論文
• 1999-12-15

著者

• HORIKOSHI Yoshiji

  Kagami Memorial Laboratory for Materials Science and Technology, Waseda University

• Sano Eriko

  Kagami Memorial Laboratory For Materials Science And Technology Waseda University

• ICHIRYU Dai

  School of Science and Engineering, Waseda University

• Ichiryu Dai

  School Of Science And Engineering Waseda University

• Horikoshi Yoshiji

  Kagami Memorial Laboratory For Materials Science And Technology Waseda University

関連論文

• Selective Growth of GaAs on GaAs (111)B Substrates by Migration-Enhanced Epitaxy
• Characteristics of Molecular Beam Epitaxy Grown GaAs Simultaneously Doped with Si and Be
• Electrical and Structural Properties of Heavily Ge-Doped GaAs Grown by Molecular-Beam Epitaxy

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