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School of Electrical Engineering, Seoul National University | 論文
- 24GHz Low Noise Amplifier Design in 65nm CMOS Technology with Inter-Stage Matching Optimization(Session8B: High-Frequency, Photonic and Sensing Devices)
- 2P4-3 横振動により接合された高延性ENIGめっき電極の評価(ポスターセッション)
- Single-Electron MOS Memory with a Defined Quantum Dot Based on Conventional VLSI Technology
- Extraction of Trap Depth in Flash Cell Having Arch-Active Structure
- Spatial Distribution of Channel Thermal Noise in Short-Channel MOSFETs
- New Poly-Si TFT with Selectively Doped Region in the Active Layer(Special Issue on Electronic Displays)
- A New Recessed Gate-Line Employing Air-Gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- A New Recessed Gate-Line Employing Air-gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD
- New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
- New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
- Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
- Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
- Gate-Overlapped Lightly Doped Drain Poly-Si Thin Film Transistors by Employing Low-Temperature Doping Techniques
- Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
- New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
- A Novel LDD-Structured Poly-Si Thin Film Transistors with High ON/OFF Ratio
- Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
- Pixel Design for TFT-LCD with Double Gate Poly-Si TFT and Double Layer Storage Capacitor
- Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel
- New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate