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School Of Science Kwansei Gakuin University | 論文
- EXAFS Study on Premartensitic Phase in Nb_3Sn
- Edge and EXAFS Studies of Bi_2O_3-Y_2O_3 Oxygen Conductor
- EXAFS Studies on Fluorites of β-PbF_2 and SrF_2
- Effects of an Electric Field on the Decay Time of Luminescence from a GaAs/Ga_Al_As Multi-Quantum-Well Structure
- Effect of Electric Field on Transient Characteristics of Luminescence from GaAs/Ga_Al_As Multi-Quantum-Well Structure
- Improvement of Gate-Insulator/Silicon Interface Characteristics in Amorphous Silicon Thin Film Transistors
- Observation of Laser-Induced Melting of Silicon Film Followed by Amorphization
- Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by MBE
- High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Highly Uniform GaAs/AIAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
- Temperature Dependence of Molecular Beam Epitaxial Growth Rates for In_xGa_As and In_xAl_As
- Proposal of a Next-Generation Super Resolution Technique
- Photolithography System Using Modified Illumination
- Photolithography System Using a Combination of Modified Illumination and Phase Shift Mask
- Photolithography System Using Annular Illumination : Photolithography
- Photolithography System Using Annular Illumination
- Fabrication of 0.1 μm Patterns Using an Alternating Phase Shift Mask in ArF Excimer Laser Lithography