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School Of Electrical Engineering Seoul National University | 論文
- Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering (GIBL)(Session4A: Nonvolatile Memory)
- 3-dimensional Terraced NAND (3D TNAND) Flash Memory(Session4A: Nonvolatile Memory)
- Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for room temperature operation(Session3: Emerging Devices I)
- Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme
- Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI)
- Self-Aligned Dual-Gate Single-Electron Transistors (DG-SETs)
- An Analytic Current-Voltage Equation for Top-contact OTFTs Including the Effects of Variable Series Resistance
- Spatial Distribution of Channel Thermal Noise in Short-Channel MOSFETs
- Pentacene TFTs Fabricated by High-aspect Ratio Metal Shadow Mask
- Low Temperature Formation of Highly Thermal Immune Ni Germanosilicide Using NiPt Alloy with Co Over-layer in Si_Ge_x according to Different Ge Fractions (x)
- Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect(Session 2A : Memory 1)
- Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect(Session 8A : Memory 2)
- Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect(Session 2A : Memory 1)
- A New Recessed Gate-Line Employing Air-Gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- A New Recessed Gate-Line Employing Air-gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD
- New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
- New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
- Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
- Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
- Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain