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School Of Electrical Engineering Seoul National University | 論文
- Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
- New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
- A Characteristics of Buried Channel Poly-Si TFTs
- In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing
- A Novel LDD-Structured Poly-Si Thin Film Transistors with High ON/OFF Ratio
- Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
- Pixel Design for TFT-LCD with Double Gate Poly-Si TFT and Double Layer Storage Capacitor
- Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel
- New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
- New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
- Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation
- 牛ウイルス性下痢・粘膜病ウイルス(BVDV)外皮膜蛋白質E2の昆虫細胞での発現(短報)
- Dual-gate single-electron transistor with silicon nano wire channel and surrounding side gates (Special issue: Solid state devices and materials)
- Mo_XSi_YN_Z Metal Gate Electrode with Tunable Work Function for Advanced CMOS
- アクティブソーナシステムの送波ビーム形成のための再帰アルゴリズムによる信号合成
- The Vapor Phase Deposition of Fluorocarbon Films for the Prevention of In-Use Stiction in Micromirrors
- Multi-level reading method by using PCI (Paired Cell Interference) in vertical NAND flash memory
- Multi-level reading method by using PCI (Paired Cell Interference) in vertical NAND flash memory
- Highly Thermal Immune Ni GermanoSilicide with Nitrogen-Doped Ni and Co/TiN Double Capping Layer for Nano-Scale CMOS Applications
- Thermally Robust Nickel Silicide Process for Nano-Scale CMOS Technology(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)