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School Of Electrical And Computer Engineering Cornell University | 論文
- A Single Element Phase Change Memory(Session 8A : Memory 2)
- A Single Element Phase Change Memory(Session 8A : Memory 2)
- Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Strain Effects in van der Pauw (VDP) Stress Sensor Fabricated on (111) Silicon
- Design Consideration of High Power LED Arrays for Backlight Unit Applications(Session8B: High-Frequency, Photonic and Sensing Devices)
- Optimal Pilot Placement for Semi-Blind Channel Tracking of Packetized Transmission over Time-Varying Channels
- First Derivatives Estimation of Nonlinear Parameters in Hybrid System(Concurrent Systems)
- Strain effects in resistor stress sensor fabricated on (001) silicon and their influences on the determination of piezoresistive coefficients(Session 6A : TFTs and Sensors)
- 4H-SiC Avalanche Photodiodes for 280nm UV Detection
- 4H-SiC Avalanche Photodiodes for 280nm UV Detection
- Strain effects in resistor stress sensor fabricated on (001) silicon and their influences on the determination of piezoresistive coefficients(Session 6A : TFTs and Sensors)
- Nanoscale Capacitance-Voltage Characterization of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures
- Design Consideration of High Power LED Arrays for Backlight Unit Applications(Session8B: High-Frequency, Photonic and Sensing Devices)
- Load Balancing for Greedy Forwarding of Geographic Routing in Wireless Networks
- Tomographic imaging of the equatorial and low-latitude ionosphere over central-eastern Brazil
- Network Layer Approaches for (m, k)-Firm Stream in Wireless Sensor Networks
- F-region radio and optical measurement of nighttime TID campaign
- Electrical and Optical Modeling of 4H-SiC Avalanche Photodiodes
- Errors in Pi-Coefficients Due to the Strain Effects in Resistor Stress Sensor on (001) Silicon