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SUMCO | 論文
- Siパワーデバイス Super Junction MOSFET 開発 : トレンチ埋込エピタキシャル成長技術による Si-Limit 突破
- トレンチ埋込エピタキシャル成長を用いた200V系スーパージャンクションMOSFET
- Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI
- Stress-Relaxation Process during Post-Annealing in SGOI Formed by H^+ Irradiation and Oxidation-Induced Ge Condensation
- Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI
- Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
- Photoluminescence characterization of strained Si-SiGe-on-insulator wafers
- Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
- Photoluminescence Characterization of Strained Si–SiGe-on-Insulator Wafers
- Improved Oxidation-Induced Ge Condensation Technique Using H+ Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator