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SONY Corporation Research Center | 論文
- Heterointerface Field Effect Transistor with 200 A-Long Gate : Semiconductors and Semiconductor Devices
- Ferroelectric Hysteresis Character of YMnO_3
- Observation of the First Order Phase Change of SbSI
- Specific Heat Measurement of Ferroelectric SbSI
- Preparation of Ferroelectric SbSI Single Crystals
- REVIEW ON DEVELOPMENT OF MAGNETIC RECORDING TAPES
- Giant Resistivity Anomaly in A15 Nb_3(Ge, Si) Superconductive Films with Compositionally Modulated Superstructure
- Effect of Under Layer on Surface Smoothness of Double Layered Metal Tapes
- Effect of Under Layer on Surface Smoothness of Double Layered Metal Tapes
- Redistribution of Cr in Capless-Annealed GaAs under Arsenic Pressure
- Characterization of ZnMgSSe-Based Wide-Gap Laser Diodes
- Infrared Absorption in P-Type Semiconductors with Zincblebde Structure : Application to Zinc Telluride
- Residual Stress in Damaged SrTiO_3 Single Crystals
- Photoelastic Constants of Strontium Titanate
- Thermal Etching of a (100) Silicon Surface
- Influence of Nitrogen Heat-Treatment on Silicon Surfaces
- 5d→4f Radiative Transition Probabilities of Ce^ and Eu^ in Crystals
- Luminescent Properties of Tb^ in Oxygen-Dominated Compounds
- Photosensitive Spin Resonance of Fe^ in CdS
- Electrical Properties of Eyaporated Single-Crystal Thin Films of n-Type PbTe