Preparation of Ferroelectric SbSI Single Crystals

概要

論文の詳細を見る
Recently, photoelectric, dieiectric and Optical properties of SbSI have been reported. Due to the diffiulties in obtaining large crystals, small crystals were used in previous experiments. In the present study, a part of the phase diagram of Sb-S-I ternary system was examined with an intention to utilize the result for crystal growth; comparatively large crystals were obtained and their dielectric properties were studied. Thermal analysis was carried out for SbI_3-Sb_2S_3, SbSI-S and SbSI-Sb systems, by examining cooling curves; and the liquidus was determined near SbSI compositions. Fig. 1 is the result of SbI_3-Sb_2S_3 system, showing that molten SbI_3 may be used as the solvent for SbSI. In (SbSI)_(1-x)-S_x system, liquidus falls gradually with the increase of x (T=400℃ at x=0 to T=360℃ at x=O.95). Although no data is available for O.95<x<1.O, the liquidus near x=1.0 is expected to fall steeply to the melting point of sulfur; this will show that sulfur is not a suitable solvent for SbSI crystal growth. Single crystals of SbSI with the dimension of about 2×1×10 mm^3 (in some cases, plate-like crystals of 5×10×O.5 mm^3) are obtained, Starting materials are SbI_3 (99.999%) and Sb_2S_3 which was synthesized from Sb (99.9999%) and S (99.99%). A melt of SbI_3-Sb_2S_3 mixture filed in evacuated Pyrex ampoule was cooled at a rate of 12℃/hour from 450℃; the bottom of the ampoule was kept slightly colder than the other parts. Good results were obtained when the molecular compositions were 65% SbI_3-35% Sb_2S_3. Crystals are dark red and most of them were grown as bundles of long Pillars with the longest axis parallel to the crystal c-axis. An example of the c cross section is shown in Fig. 2.
社団法人日本物理学会の論文
1964-07-05

Preparation of Ferroelectric SbSI Single Crystals

スポンサーリンク

概要

著者

関連論文

スポンサーリンク