Influence of Nitrogen Heat-Treatment on Silicon Surfaces

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概要

• 論文の詳細を見る

• Heat-treatment of silicon wafers in nitrogen at high temperatures results in haziness of the surface and formation of stacking fault nuclei.It was found from AES analysis that the hazy film was produced by nitridation of the wafers.The hazy film was not formed in the presence of a small amount of oxygen in a nitrogen atmosphere, while the stacking fault nuclei were still introduced in the wafers.It was concluded that the stacking fault nuclei were formed by small amounts of oxidants or the introduced oxygen in the nitrogen atmosphere.

• 社団法人応用物理学会の論文
• 1978-08-05

著者

• Hamazaki Masaharu

  Sony Corporation Research Center

• FUTAGAMI Motonobu

  Sony Corporation Research Center

関連論文

• Thermal Etching of a (100) Silicon Surface
• Influence of Nitrogen Heat-Treatment on Silicon Surfaces

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