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SEIKO EPSON CORPORATION, TFT Research Laboratory | 論文
- Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator
- Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
- Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
- Oxidation of Amorphous Silicon for Superior Thin Film Transistors
- Oxidation of Amorphous Silicon for Superior Thin Film Transistors (OASIS TFT)
- Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors
- Effects of Channel Thickness on Poly-Crystalline Silicon Thin Film Transistors
- Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors
- Wettability of Silicon Oxide with Poly-Crystalline Silicon
- Conduction Mechanism of Leakage Current Observed in Metal-Oxide-Semiconductor Transistors and Poly-Si Thin-Film Transistors
- TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)