スポンサーリンク
Research Laboratory Oki Electric Industry Co. Ltd. | 論文
- Zn-Te Compensated (Ga, Al) As Diodes with Negative Resistance
- GaAs Light Emitting Device with Light-Activated Negative Resistance
- Green GaP Light Emitting Diodes with Negative Resistance
- Structural Analysis of a Carbon Nitride Film Prepared by Ion-Beam-Assisted Deposition
- Control of Surface Reaction on Highly Accurate Low-k Methylsilsesquioxane Etching Process : Nuclear Science, Plasmas, and Electric Discharges
- Magnetic Neutral Loop Discharge (NLD) Plasma and Application to SiO_2 Etching Process
- Dry Etch Process in Magnetic Neutral Loop Discharge Plasma
- High Speed GaAs Digital Integrated Circuits
- Phased-Array Laser Diode with Buried Optical Guides and Inverted Current Injection
- Low-Phase-Aberration Output of 830 nm AlGaAs Offset-Coupled Laser Arrays
- A Study of GaAs Digital ICs on Si Substrates
- Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation
- The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method
- A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
- Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
- Formation of (Ba, Rb)BiO_3 Thin Films by Molecular Beam Epitaxy Using Distilled Ozone (Special Issue on High-Temperature Superconducting Electronics)
- Changes of Chaotic Oscillation Patterns of Artificial Lipid Membrane Induced by Light
- Second-Harmonic Generation from Y-Type Deposition of N-Acyl-p-Nitroaniline Langmuir-Blodgett Films
- Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAsP