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Research Laboratory, OKI Electric Industry Co., Ltd. | 論文
- Difference in Electroluminescent ZnS:Tb,F Thin Films Prepared by Electron-Beam Evaporation and RF Magnetron Sputtering
- Effects of Annealing on ZnS:Tb, F Electroluminescent Thin Films Prepared by rf Magnetron Sputtering
- ZnS:Mn Thin Film Eleetroluminescent Devices Having Doubly-Stacked Insulating Layers
- Influence of RF Power on Properties of a-Si_Ge_x:H Prepared by RF Glow Discharge Decomposition
- Two Components of Light-Induced Photoconductivity Decays in a-Si:H
- Fabrication of a New Multilayered Amorphous Silicon Photoreceptor Drum by Glow Discharge Method
- Spin-Valve Film for Sensitive Giant Magnetoresistive Sensor Using AC Bias Magnetic Field
- Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device
- Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device
- Superconducting Y-Ba-Cu-O Oxide Films by OMCVD : Electrical Properties of Condensed Matter
- Properties of Hydrophone with Porous Piezoelectric Ceramics : Piezoelectrics
- Green GaP Light Emitting Diodes with Negative Resistance
- Effect of Annealing Method to Crystalize on Sr_Bi_Ta_2O_ Thin Film Properties Formed from Alkoxide Solution
- A New Kind of Electroluminescent Devices Containing Ultrathin Polyimide Langmuir-Blodgett Films as Insulators
- Low-Phase-Aberration Output of 830 nm AlGaAs Offset-Coupled Laser Arrays
- Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation
- The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method
- A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
- Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
- Formation of (Ba, Rb)BiO_3 Thin Films by Molecular Beam Epitaxy Using Distilled Ozone (Special Issue on High-Temperature Superconducting Electronics)