A New Kind of Electroluminescent Devices Containing Ultrathin Polyimide Langmuir-Blodgett Films as Insulators

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-08-01

著者

• FUJII Sadao

  Central Research Laboratory, Kanegafuchi Chemical Industry Co.

• HAYASHI Tadashi

  Research Laboratory, Oki Electric Industry Co., Ltd.

• SEKIDO Yoshihiro

  Research Laboratory, Oki Electric Industry Co., Ltd.

• Fujii Sadao

  Central Research Laboratories Kaneka Corporation

• Hayashi Tadashi

  Research Laboratory Oki Electric Co. Ltd.

• UEKITA Masakazu

  Central Research Laboratories, Research Institute, KANEKA CORPORATION

• Uekita Masakazu

  Central Research Laboratories Kaneka Corporation

• Sekido Yoshihiro

  Research Laboratory Oki Electric Co. Ltd.

関連論文

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• Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
• Difference in Electroluminescent ZnS:Tb,F Thin Films Prepared by Electron-Beam Evaporation and RF Magnetron Sputtering
• Effects of Annealing on ZnS:Tb, F Electroluminescent Thin Films Prepared by rf Magnetron Sputtering
• ZnS:Mn Thin Film Eleetroluminescent Devices Having Doubly-Stacked Insulating Layers
• Effect Molecular Arrangement of Alignment Film for Liquid Crystals
• Alignment of Nematie Liquid Crystals by Polyimide Langmnuir-Blodgett Films
• Alignment of Nematic Liquid Crystal Using Polyimide Langmuir-Blodgett Films (II)
• A New Kind of Electroluminescent Devices Containing Ultrathin Polyimide Langmuir-Blodgett Films as Insulators

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