スポンサーリンク
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan | 論文
- Surface Treatment Effect of (NH4)2Sx on $ p$-type GaAs Field Emitter Arrays
- Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
- Nonpolar $(11\bar{2}0)$ p-Type Nitrogen-Doped ZnO by Remote-Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
- Morphological Study on Porous Silicon Carbide Membrane Fabricated by Double-Step Electrochemical Etching
- Concentration of Electric Field near Si Dot/Thermally-Grown SiO2 Interface
- Growth Modes of Silicon Carbide in Low-Temperature Liquid Phase Epitaxy
- Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08 Heterostructures