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Research Center for Micro-Structure Devices, Nagoya Institute of Technology | 論文
- Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
- Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
- Effect of Collection Distance on the Lattice Structure of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition : Structure and Mechanical and Thermal Properties of Condensed Matter
- High Anatase-Rutile Transformation Temperature of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition : Structure and Mechanical and Thermal Properties of Condensed Matter
- Structural and Luminescence Properties of InAs Quantum Dots : Effect of Nitrogen Exposure on Dot Surfaces
- Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon
- Multirate Sampled Data Control of Nonholonomic Systems in Time-State Control Form Based on Periodic Switching
- Mechanical Property Characterization of Boron-Doped Silicon by Berkovich-Type Indenter : Semiconductors
- Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
- Valence-Band Discontinuity at the AIN/Si Interface
- Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
- High-Temperature Behaviors of GaN Schottky Barrier Diode
- Suppression of Dark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates
- First Fabrication of a Reliable AlGaAs/GaAs LED on Si with Self-Assembled GaAs Islands Active Region
- Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates
- First Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Wells Laser Grown on Si Substrate
- Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Well Laser Grown on Si Substrate