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Research Center For Photoenergetics Of Organic Materials Osaka University | 論文
- Electrochemical Method for Evaluation of Structural Perfection of Hydrogen-Terminated Si(111)Surface
- Formation of bulk-heterojunction structure in organic bilayer solar cells by heat treatment
- Photocarrier Generation in Organic Thin Film Solar Cells
- Efficient Reductive Alkylation of Aniline with Acetone over Pt Nanoparticles Encapsulated in Hollow Porous Carbon
- X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
- Efficient Dihydroxylation of Naphthalene on Photoirradiated Rutile TiO_2 Powder in Solution Containing Hydrogen Peroxide
- Dihydroxylation of Naphthalene by Molecular Oxygen and Water Using TiO_2 Photocatalysts
- Direct Observation of Amphiphilic Silica Particles Assembled at an Oil-Water Interface
- Photocatalytic Activity of S-doped TiO_2 Photocatalyst under Visible Light
- Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations
- High-Frequency Coherent Phonons in Graphene on Silicon
- Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
- Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
- Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
- Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process
- Optical Properties and Crystallinity of ZnO Films for Application in Super-Resolution Optical Discs
- Oxygen-induced reduction of the graphitization temperature of SiC surface (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Low-energy-electron-diffraction and X-ray-phototelectron-spectroscopy studies of graphitization of 3C-SiC(111) thin film on Si(111) substrate (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Erratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”
- Epitaxial Growth Processes of Graphene on Silicon Substrates