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Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information | 論文
- ULTRASONIC COURTSHIP SIGNAL IN A MOTH, OSTRINIA FURNACALIS I. FEMALE HEARING AND MATING BEHAVIOR(Behavior Biology and Ecology,Abstracts of papers presented at the 76^ Annual Meeting of the Zoological Society of Japan)
- Temperature Dependence of the Ideality Factor of Ba_K_xBiO_3/Nb-doped SrTiO_3 All-Oxide-Type Schottky Junctions
- Effect of the Field Dependent Permittivity and Interfacial Layer on Ba_K_xBi0_3/Nb-Doped SrTi0_3 Schottky Junctions
- Fowler-Nordheim Current Oscillations in Si(111)/SiO_2/Twisted-Si(111) Tunneling Structures
- Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
- Charge polarization effect on single-hole-characteristics in a two-dimensional Si multidot structure
- Ambipolar Coulomb Blockade Characteristics in a Two-Dimensional Si Multidot Device
- Resonant tunneling characteristics in SiO₂/Si double-barrier structures in a wide range of applied voltage
- Artificial Dislocation Network in Silicon-on-Insulator Layer for Single-Electron Devices
- Space-Group Determination of a New Superconductor (Nd_Sr_Ce_)_2CuO_ Using Convergent-Beam Electron Diffraction
- Superconductivity in the Nd-Sr-Ce-Cu-O System : Electrical Properties of Condensed Matter
- Photoluminescence Properties of Y_2O_3:Eu Whiskers With Preferential Orientation
- Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator Substrate : Semiconductors
- Formation of Au and AuSi_x-Pyramids in Separation by Implanted Oxygen Wafers with Si Pillars in SiO_2 Layer
- Availability of CD10 as a Histopathological Diagnostic Marker
- Scanning Tunneling Microscope Study of (001)InP Surface Prepared by Gas Source Molecular Beam Epitaxy
- In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2×4) GaAs Surfaces
- In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-Doped MBE-Grown (2x4) GaAs Surfaces
- Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
- Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides