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Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio | 論文
- Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
- Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiN_χ Film(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures
- Nitridation of GaP(100)Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma
- Nitridation of GaP Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma
- Precisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices
- ヘキサゴナルBDD単電子論理回路のためのGaAs単電子節点デバイスの検討(量子ナノデバイスと回路応用)
- 低消費電力量子ナノ集積回路のためのショットキーラップゲート制御量子細線および単電子トランジスタのスイッチング特性解析(量子ナノデバイスと回路応用)
- Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HENTs Having a Silicon Interface Control Layer
- Fabrication of AlGaN/GaN Quantum Nanostructures by Methane-Based Dry Etching and Characterization of Their Electrical Properties
- Control of Order Parameter during Growth of In_Ga_P/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy Using Tertiarybutylphosphine
- Two-Dimensional Modulation Code for Multilayered Waveguide Holographic Memory
- Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates
- Optimization and Interface Characterization of a Novel Oxide-Free Insulated Gate Structure for InP Having an Ultrathin Silicon Interface Control Layer
- In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2
- Control of Dot Size and Tunneling Barrier Profile in In_Ga_As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates
- DLTS, PL and CL Study of Dominant Deep Level and Its Removal in InGaP/GaAs Heterostructure Grown by TBP-Based GSMBE
- Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4 × 6) Reconstruction
- Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4x6) Reconstruction
- Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures