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Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio | 論文
- Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires
- Reactive Ion Beam Etching of GaN and AlGaN for Nano-structure Fabrication Using Methane-Based Gas Mixtures
- A Novel GaAs Binary Decision Diagram Device Having Quantum Wire Branch-Switches Controlled by Wrap Gates
- Mechanism of current leakage through metal/n-GaN interfaces
- Structural and Optical Properties of InGaAs Ridge Quantum Wire Arrays with Sub-micron Pitches Grown by Selective MBE on InP Substrates
- Molecular Beam Epitaxy Growth of High-Quality Linear Arrays of InGaAs Ridge Quantum Wires With Nanometer Wire Widths and Submicron Wire Pitches on Patterned InP Substrates
- Structural and Optical Properties of 10nm-Class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate
- Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective Molecular Beam Epitaxial Growth of InGaAs Quantum Structure Arrays
- Ridge Uniformity Improvement Toward Growth of Sub-10nm InGaAs Ridge Quantum Wires by Selective MBE on Patterned InP Substrate
- In Situ X-Ray Photoelectron Spectroscopy Study of Etch Chemistry of Methane-Based Reactive Ion Beam Etching of InP Using N2
- Control of Order Parameter during Growth of In0.5Ga0.5P/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy Using Tertiarybutylphosphine
- Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutylphosphine-Based Gas Source Molecular Beam Epitaxy
- Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate