スポンサーリンク

Process Technology Development Div., Renesas Technology Corp. | 論文

• Study of Stress from Discontinuous SiN Liner for Fully-Silicided Gate Process
• Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs
• Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
• Layout Independent Transistor with Stress-controlled and Highly Manufacturable STI Process
• Saturation Phenomenon of Stress Induced Gate Leakage Current
• Diffusion control technique in TiN stacked metal gate electrodes for p-MISFETs
• The Impact of Thickness Control in HfSiON Gate Dielectric on Electron Mobility with sub-nm EOT

スポンサーリンク