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Process Development Team, Memory Division, Samsung Electronics Co., Ltd. | 論文
- Ge Implantation to Improve Crystallinity and Productivity for Solid Phase Epitaxy Prepared by Atomic Mass Unit Cross Contamination-Free Technique
- Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
- Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
- Deposition Characteristics of (Ba, Sr)TiO_3 Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures
- Variation of Electrical Conduction Phenomena of Pt/(Ba, Sr)TiO_3/Pt Capacitors by Different Top Electrode Formation Processes
- A Process Integration of (Ba, Sr) TiO_3 Capacitor into 256M DRAM
- Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process
- Evaluation of PECVD a-SiC:H as a Cu Diffusion Barrier Layer of Cu Dual Damascene Process
- A 0.24μm PRAM Cell Technology Using N-Doped GeSbTe Films(Phase Change RAM)(New Era of Nonvolatile Memories)
- Laser-induced Epitaxial Growth (LEG) Technology for High Density 3-D Stacked Memory with High Productivity
- Laser-induced Epitaxial Growth (LEG) Technology for High Density 3-D Stacked Memory with High Productivity
- Preparation and Electrical Properties of SrTiO3 Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition (MOCVD)
- Structural and Electrical Properties of Ba_Sr_TiO_3 Films on Ir and IrO_2 Electrodes
- Preparation and Characterization of Iridium Oxide Thin Films Grown by DC Reactive Sputtering