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Precision Instrument Development Center | 論文
- Passivation of GaAs Power Field-Effect Transistor Using Electron Cyclotron Resonance Chemical Vapor Deposition Silicon Nitride Technique
- Improving the Transient Response of a Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe:H Film
- Improving Transient Response of Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe Film
- Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer
- Low-Temperature Process to Improve the Leakage Current of (Ba, Sr)TiO_3 Films on Pt/TiN/Ti/Si Substrates
- The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO_3 Thin Films at Low Substrate Temperatures
- Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO_3/Pt Capacitors at Low Substrate Temperatures
- Double Graded-Gap a-SiC:H P-I-N Thin-Film LED with Composition-Graded N-Layer and Carbon-Increasing P-Layer
- Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO3/Pt Capacitors at Low Substrate Temperatures
- The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO3 Thin Films at Low Substrate Temperatures