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Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology | 論文
- GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy
- Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers
- Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AIN Films by Plasma-Assisted Molecular Beam Epitaxy
- Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
- Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations : Semiconductors
- High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process
- Structural Properties of GaN Film with AIN Buffer Layers with Varying Growth Temperatures by Plasma-Assisted Molecular Beam Epitaxy
- Growth of Droplet-Free AlGaN Buffer Layer with +c Polarity by Molecular Beam Epitaxy
- Spin-polarized Tunneling in Ultrasmall Vertical Ferromagnetic Tunnel Junctions
- High-Quality Growth of AlN Epitaxial Layer by Plasma-Assisted Molecular-Beam Epitaxy : Semiconductors
- Estimation of Converters with SiC Devices for Distribution Networks
- Spin-polarized Tunneling in Ultrasmall Vertical Ferromagnetic Tunnel Junctions