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Optoelectronics And High Frequency Device Research Laboratories Nec Corporation | 論文
- Hybrid Integrated 4×4 Optical Matrix Switch Module on Silica Based Planar Waveguide Platform (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Spot-Size-Converter Integrated Semiconductor Optical Amplifiers for Optical Switching Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Hybrid Integrated 4×4 Optical Matrix Switch Module on Silica Based Planar Waveguide Platform (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Photonic Integrated Circuits Fabricated by Bandgap-Energy-Controlled Selective MOVPE Technique
- A High-Performance Switch Architecture for Free-Space Photonic Switching Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
- A High-Performance Switch Architecture for Free-Space Photonic Switching Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Microwave Performance of 0.3-μm Gate-Length Multi-Finger AlGaN/GaN Heterojunction FETs with Minimized Current Collapse
- Photoemission Study on Protonic Conductor CaZrO_3:Evidence of the Exchange Mechanism of Proton and Hole
- Repetitive One-Tenth Micron Pattern Fabrication Using An EB Block Exposure System
- Electron Beam Block Exposure System for 256 M Dynamic Random Access Memory Lithography
- 'NOWEL-2' Variable-Shaped Electron Beam Lithography System for 0.1 μm Patterns with Refocusing and Eddy Current Compensation
- Electron Beam Block Exposure : Electron Beam Lithography
- Electron Beam Block Exposure
- High-Quality CVD/Thermal Stacked Gate Oxide Films with Hydrogen-Free CVD SiO_2 Formed in a SiCl_4-N_2O System
- Kinetic Study of Silicon Nitride Growth from Dichlorosilane and Ammonia
- Uniformity Improvement of Optical and Electrical Characteristics in Integrated Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity
- Record Low Threshold Current in Microcavity Surface-Emitting Laser
- Transmission Self-Electro-Optic Effect Devices Based on Wannier-Stark Localization in a GaAs/AlAs Superlattice
- Low Resistance NiAuGe/Au Ohmic Contacts on N-Type (111)A GaAs
- Electrical Characterization of Lateral P-N Junctions Grown on (111)A GaAs Nonplanar Substrates by Molecular Beam Epitaxy