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Optoelectronics And High Frequency Device Research Laboratories Nec Corporation | 論文
- High-Pressure Transport Properties of the Superconducting Spin-Ladder System Sr_Ca_xCu_O_
- Superconductivity in the Ladder Material Sr_Ca_Cu_O_
- 0.21-fJ GaAs DCFL Circuits Using 0.2-μm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Temperature Dependence of Luminescence Decay Time of InP Quantum Disks
- Lateral Composition Modulation Induced Structural Anisotropy in InP/GaInP Quantum Dot System
- Hydrogen Passivation of Polysilicon Thin-Film Tramsistors by Electron Cyclotron Resonance Plasma
- A Novel Fabrication Method for Polycrystalline Silicon Thin-Film Transistors with a Self-Aligned Lightly Doped Drain Structure
- Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
- Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
- Local Magnetic Properties of Underdoped La_Sr_χ CuO_4 Single Crystal Probed by Scanning Superconducting Quantum Interference Device Microscopy : Superconductors
- Preparation and Nanoscale Characterization of Highly Stable YBa_2Cu_3O_ Thin Films
- Studies on Anisotropy of Oxide Superconductors by STM/STS and Magnetization Measurements : III-A Superconducting Characteristics : III Oxide Superconductors, Experiments III : Superconducting State
- 650 nm AlGaInP Visible Light Laser Diode with Dry-Etched Mesa Stripe
- Electronic Structure in the Bulk State of Protonic Conductor CaZrO_3 by Resonant Soft-X-Ray Emission Spectroscopy : Electrical Properties of Condensed Matter
- A Multiple Wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) Array for Optical Interconnection
- Thermal Analysis of Laser-Emission Surface-Normal Optical Devices with a Vertical Cavity
- Impact of Thermal Nitridation on Microscopic Stress-Induced Leakage Current in Sub-10-nm Silicon Dioxides
- Novel Dual Wavelength Electro-Optical Bistability in InGaAs/AlGaAs Multiple Quantum Wells
- Dual Wavelength Electro-Optical Bistability in an Asymmetric Self-Electro-Optic Effect Device
- Spot-Size-Converter Integrated Semiconductor Optical Amplifiers for Optical Switching Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)