スポンサーリンク
Ntt Photonics Laboratories | 論文
- Novel and Simple Preparation Method of Matrix-Type Composite Particles for Controlled Drug Release by Mechanical Action
- Nature of Mechanoradical Formation of Substituted Celluloses as Studied by Electron Spin Resonance
- ステンレス製容器を用いたメカノケミカル固相反応によるリボフラビンラジカルの生成
- Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs
- Ultrahigh-Speed Integrated Circuits Using InP-Based High-Electron-Mobility Transistors(HEMTs)
- A Driving Test of a Small DC Motor with Rectenna Array
- Fundamental Experiment of a Rectenna Array for Microwave Power Reception (Special Issue on 1992 International Symposium on Antennas and Propagation)
- Surface-Grating Distributed Bragg Reflector Lasers with Deeply Etched Grooves Formed by Reactive Beam Etching
- A Phase Interpolation Direct Digital Synthesizer with a Symmetrically Structured Delay Generator (Special Issue on Microwave and Millimeter Wave Technology)
- A Fast Frequency Switching Synthesizer with a Digitally Controlled Delay Generator(Special Section on Fundamentals of Multi-dimensional Mobile Information Network)
- A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation(Optical)
- A Wide-Bandwidth-Output Direct Digital Synthesizer with Multiple Delay Generators
- A Wide-Bandwidth-Output Direct Digital Synthesizer with Plural Delay Generators
- W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- DC Characteristics of InP HBTs under High-Temperature and Bias Stress
- High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Design Study on RF Stage for Miniature PHS Terminal (Special Issue on Microwave Devices for Mobile Communications)
- A 1.55-μm Hybrid Integrated Wavelength-Converter Module Using Spot-Size Converter Integrated Semiconductor Optical Amplifiers on a Planar-Lightwave-Circuit Platform (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- A 1.55-μm Hybrid Integrated Wavelength-Converter Module Using Spot-Size Converter Integrated Semiconductor Optical Amplifiers on a Planar-Lightwave-Circuit Platform (Joint Special Issue on Recent Progress in Optoelectronics and Communications)