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Ntt Corp. Kanagawa Jpn | 論文
- 縦型結合ドット配列中の電子状態
- Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
- Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
- 28pYS-6 2次元電子系の磁気キャパシタンスとテラヘルツ分光
- Single-Electron Detection in Si-Wire Transistors at Room Temperature
- Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
- A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
- Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
- Investigation of Hall Resistivity in Antidot Lattices with respect to Commensurability Oscillations
- On the Mechanism of Commensurability Oscillations in Anisotropic Antidot Lattices
- Current-Direction-Dependent Commensurate Oscillations in GaAs/AlGaAs Antidot Superlattice
- Amino Acids and Peptides. XVII. : Synthesis of a Tridecapeptide Corresponding to the Sequence 165-177 of T-Kininogen (Tryptic Peptide) Containing Gln-Val-Val-Ala-Gly Sequence and the Relationship between Structure and Effect on Thiol Proteinase(Organic,Ch
- Nanoscale Evaluation of Structure and Surface Potential of Gated Field Emitters by Scanning Maxwell-Stress Microscope
- Fabrication of Cantilever with Ultrasharp and High-Aspect-Ratio Stylus for Scanning Maxwell-Stress Microscopy
- Q&Aコーナー
- Line-Edge Roughness: Characterization and Material Origin
- Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
- Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
- Si Single-Electron Transistors with High Voltage Gain
- Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation