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Ntt Corp. Atsugi‐shi Jpn | 論文
- グリッドコンピューティングによる実世界情報マイニングの提案(セッション4: メタデータとWebデータベース応用)
- A Low Power Multiplier Using Adiabatic Charging Binary Decision Diagram Circuit
- Evaluation of Soft-Error Immunity for 1-V CMOS Memory Cells with MTCMOS Technology (Special Issue on Microelectronic Test Structure)
- Differential Processing Using an Arrayed-Waveguide Grating (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Differential Processing Using an Arrayed-Waveguide Grating (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- 0.21-fJ GaAs DCFL Circuits Using 0.2-μm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs (Special Issue on Ultra-High-Speed IC and LSI Technology)
- A 1.3V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10Gbps (Special Issue on Ultra-High-Speed LSIs)
- 特集「待ち行列の数理」にあたって
- A Phase Interpolation Direct Digital Synthesizer with a Symmetrically Structured Delay Generator (Special Issue on Microwave and Millimeter Wave Technology)
- A Fast Frequency Switching Synthesizer with a Digitally Controlled Delay Generator(Special Section on Fundamentals of Multi-dimensional Mobile Information Network)
- Termination of Order-Sorted Rewriting with Non-minimal Signatures
- Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
- 70-Gbit/s Multiplexer and 50-Gbit/s Decision IC Modules Using InAlAs/InGaAs/InP HEMTs
- Ultra-Fast Optoelectronic Decision Circuit Using Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode (Special Issue on Integrated Electronics and New System Paradigms)
- Proposal and Preliminary Experiments of Indoor Optical Wireless LAN Based on a CMOS Image Sensor with a High-Speed Readout Function Enabling a Low-Power Compact Module with Large Uplink Capacity ( Recent Progress in Optoelectronics an
- Hybrid External Cavity Lasers Composed of Spot-Size Converter Integrated LDs and UV Written Bragg Gratings in a Planar Lightwave Circuit on Si(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- Monolithic integration of UTC-PDs and InP HBTs using Be ion implantation
- Polarization Control of VCSEL on (311) B Substrate and Its Effects on Transmission Characteristics(Special Issue on Optical Interconnects/Optical Signal Processing)
- 1.3-μm Surface-Normal Reflective Optical Modulators Based on the Wannier-Stark Effect in InP/InGaAsP Superlattices
- Highly Reliable Submicron InP-Based HBTs with over 300-GHz f_t