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Ntt Corp. Atsugi‐shi Jpn | 論文
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Measurement of the Fluctuation of Structures by Reflection of Laser Beam. I
- Measurement of the Fluctuation of Structures by Reflection of Laser Beam. I(Environmental Safety Control and Risk Management)(FID)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode
- InP-Based Monolithic Optical Frequency Discriminator Module for WDM Systems (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- InP-Based Monolithic Optical Frequency Discriminator Module for WDM Systems (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
- Name Creation Implements Restriction in the π-Calculus
- Optical Characteristics and Reliability of Plastic Ferrules for MU-Type Simplified Receptacles(Connector and Sliding Contacts)(IS-EMD2003 : Recent Technical Trend of Electro-Mechanical Devices)
- Optical Label Switching Using Optical Label Based on Wavelength and Pilot Tone Frequency (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Optical Label Switching Using Optical Label Based on Wavelength and Pilot Tone Frequency (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- On Backward-Style Anonymity Verification
- An Adversary Model for Simulation-Based Anonymity Proof
- Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
- Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
- Study of a PMD Tolerance Extension by InP HBT Analog EDC IC without Adaptive Control in 43G DQPSK Transmission
- Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission