スポンサーリンク
Ntt Corp. Atsugi‐shi Jpn | 論文
- Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
- Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
- Reduction of Impurities in Fluoride Glass Optical Fiber
- Fabrication of Low OH and Low Loss Fluoride Optical Fiber
- Write Power Optimizing Method for Multi-Pulse Recording on Magneto-Optical Disk
- Fast Restoration on Network Control Plane Established through Photonic MPLS Routers(The IEICE Transactions on Communications, Vol.E86-B, No.5)
- Fast Restoration on Network Control Plane Established through Photonic MPLS Routers ( Recent Progress in Optoelectronics and Communications)
- 40-Gbit/s Ti:LiNbO_3 Optical Modulator with a Two-Stage Electrode(Special Issue on High-Capacity WDM/TDM Networks)
- Push-Pull Type Ridged Ti:LiNbO_3 Optical Modulator (Special Issue on Optomicrowave Techniques and Their Applications)
- A Fully Monolithic Integrated 43-Gbit/s Clock and Data Recovery Circuit Using InAlAs/InGaAs/InP HEMTs
- Ruthenium-Doped Semi-Insulating InP-Buried InGaAlAs/InAlAs Multi-Quantum-Well Modulators
- The Primary Structure of Cassowary (Casuarius casuarius) Goose Type Lysozyme(Biochemistry & Molecular Biology)
- A 24-GS/s 6-bit R-2R Current-Steering DAC in InP HBT Technology
- A 2-GHz 60-dB Dynamic-Range Si Logarithmic/Limiting Amplifier with Low Phase Deviations (Srecial Section on Analong Circuit Tectningues in the Digital-oriented Era)
- The Object-Space Parallel Processing of the Multipass Rendering Method on the (Μπ)^2 with a Distributed-Frame Buffer System
- Efficiency Enhancement in a Cherenkov Laser by a Proper Variation of Dielectric Thickness
- A Low Power Multiplier Using Adiabatic Charging Binary Decision Diagram Circuit
- Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
- Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
- Compressively strained In[x]Al1-xN/Al0.22Ga0.78N/GaN(x=0.245-0.325) heterostructure field effect transistors with Regrown AlGaN contact layers (Special issue: Solid state devices and materials)