スポンサーリンク
National Nano Device Lab. Hsinchu Twn | 論文
- Pattern Effects on Planarization Efficiency of Cu Electropolishing
- Investigation of Carrying Agents on Microstructure of Electroplated Cu Films
- Investigation of Superfihling and Electrical Characteristics in Low-Impurity-Incorporated Cu Metallization
- Skew-Free Optical Interconnections Using Fiber Image Guides for Petabit-per-Seconf Computer Networks
- Ion-Implantation Treatment(Ba, Sr)TiO_3 Thin Films
- Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications
- Rapid-Thermal-Processed BaTiO_3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition
- Effects of Helicon-Wave-Plasma Etching on the Charging Damage of Aluminum Interconnects
- Charging Damages to Gate Oxides in a Helicon O_2 Plasma
- Antenna Charging Effects on the Electrical Characteristics of Polysilicon Gate during Electron Cyclotron Resonance Etching
- Effects of Polysilicon Electron Cyclotron Resonance Etching on Electrical Characteristics of Gate Oxides
- A meta-analysis of DNA repair gene XPC polymorphisms and cancer risk
- Different roles of MTHFR C677T and A1298C polymorphisms in colorectal adenoma and colorectal cancer : a meta-analysis
- Identification of a novel human doublecortin-domain-containing gene (DCDC1) expressed mainly in testis
- Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
- Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
- Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection
- Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
- Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System