スポンサーリンク
National Institute of Materials Science (NIMS) | 論文
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
- Selective Growth of Cu Nanowires on Si(111) Substrates
- Leakage Current Distribution of Cu-Contaminated Thin SiO_2
- Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides
- Highly Localized Light Field on Metallic Nanoarrays Prepared with DNA Nanofibers
- Real-Time Observation of (1×1)-(7×7) Phase Transition on Vicinal Si(111) Surfaces by Scanning Tunneling Microscopy
- Behaviors of surfactant atoms on Si(001) surface
- Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant
- Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? : Bi as a Surfactant with Small Self-Incorporation
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
- Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
- Surface Observation and Modification of Si Substrate in NH_4F and H_2SO_4 Solutions
- Surface Observation and Modification of Si Substrate in Solutions
- Electrochemical Scanning Tunneling Microscopy and Atomic Force Microscopy Observationson Si(111) in Several Solutions
- Optimization of the piezoresistive AFM cantilever design for using at cryogenic temperature
- Atomic Structure of Hydrogen-Terminated Si(111) Surfaces by Hydrofluoric Acid Treatments
- Hybrid Laser Activation of Highly Concentrated Bi Donors in Wire-δ-Doped Silicon
- Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices