スポンサーリンク
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan | 論文
- Energy Transfer in Multi-Stacked InAs Quantum Dots
- Developing a Half-Cladding Semiconductor Photonic Device Structure for Surface Transmission of Light Waves
- Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
- Direct Comparison of Distant Optical Lattice Clocks at the $10^{-16}$ Uncertainty
- Design of Monolithic Rectangular Cavity of 30-cm Length
- Characterization of Wavelength-Tunable Quantum Dot External Cavity Laser for 1.3-μm-Waveband Coherent Light Sources
- Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations
- Fabrication of Metal Embedded Nano-Cones for Single Quantum Dot Emission
- Si-Ion Implantation Doping in \beta-Ga