スポンサーリンク
National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan | 論文
- Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
- Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K
- Stimulated Brillouin Amplification in a Tellurite Fiber as a Potential System for Slow Light Generation
- Stable Operation of Femtosecond Laser Frequency Combs with Uncertainty at the $10^{-17}$ Level toward Optical Frequency Standards
- High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
- Optical Cavity Properties of Metal Mirror Microcavities with InAsSb Quantum Dots
- Selective Formation of Self-Organized InAs Quantum Dots Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy
- Narrow-Line and Frequency Tunable Diode Laser System for S–D Transition of Ca+ Ions
- High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors
- Growth of InAsSb Quantum Dots on GaAs Substrates Using Periodic Supply Epitaxy
- Erratum: "High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors"