スポンサーリンク
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan | 論文
- Quantitative analysis of coherent and incoherent tunneling currents in MgO-based epitaxial magnetic tunnel junctions
- Voltage-Induced Magnetic Anisotropy Changes in an Ultrathin FeB Layer Sandwiched between Two MgO Layers
- Effect of MgO Cap Layer on Gilbert Damping of FeB Electrode Layer in MgO-Based Magnetic Tunnel Junctions
- Characterization of Ultrathin Fe--Co Layer Grown on Amorphous Co--Fe--B by In situ Reflective High-Energy Electron Diffraction
- Critical Field of Spin Torque Oscillator with Perpendicularly Magnetized Free Layer
- Ultralow-Voltage Spin-Transfer Switching in Perpendicularly Magnetized Magnetic Tunnel Junctions with Synthetic Antiferromagnetic Reference Layer
- Linear Frequency Modulation by Weak Bipolar Magnetic Fields for a Vortex-Mode Oscillation in a Nanocontact Magnetoresistive Spin-Torque-Oscillator
- Large Emission Power over 2 μW with High Q Factor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator
- Characterization of Ultrathin Fe-Co Layer Grown on Amorphous Co-Fe-B by In situ Reflective High-Energy Electron Diffraction
- Large Emission Power over 2μW with High Q Factor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator
- Linear Frequency Modulation by Weak Bipolar Magnetic Fields for a Vortex-Mode Oscillation in a Nanocontact Magnetoresistive Spin-Torque-Oscillator
- Effect of MgO Cap Layer on Gilbert Damping of FeB Electrode Layer in MgO-Based Magnetic Tunnel Junctions
- Damping parameter and interfacial perpendicular magnetic anisotropy of FeB nanopillar sandwiched between MgO barrier and cap layers in magnetic tunnel junctions
- Macrospin simulation of high-frequency voltage-assisted magnetization reversal in a perpendicularly magnetized disk with voltage-induced magnetic anisotropy
- High-speed magnetic field detection using a spin valve with a perpendicularly magnetized free layer and an in-plane magnetized reference layer
- Voltage-Induced Magnetic Anisotropy Changes in an Ultrathin FeB Layer Sandwiched between Two MgO Layers
- Discontinuous frequency drop in spin torque oscillator with a perpendicularly magnetized FeB free layer
- High emission power and Q factor in spin torque vortex oscillator consisting of FeB free layer
- Bias field angle dependence of the self-oscillation of spin torque oscillators having a perpendicularly magnetized free layer and in-plane magnetized reference layer