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National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn | 論文
- AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
- Very low temperature epitaxial growth of silicon films for solar cells
- Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells
- Band Lineup at the Interface between Boron-Doped P-Type Hydrogenated Amorphous Silicon and Crystalline Silicon Studied by Internal Photoemission
- Quinhydrone/Methanol Treatment for the Measurement of Carrier Lifetime in Silicon Substrates : Semiconductors
- Surface Passivation Effect of Silicon Substrates due to Quinhydrone/Ethanol Treatment(Semiconductors)
- Neutron Diffraction Study of Magnetic Structure of the Heavy Fermion Antiferromagnet Ce(Ni_Rh_x)_2Ge_2
- Magnetic Structure of Ce(Ni_Pd_x)_2Ge_2 Proximate to the Magnetic Instability(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Effects of High-k Passivation Films on AlGaN/GaN HEMT
- p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
- High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
- High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
- GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy
- Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers
- Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AIN Films by Plasma-Assisted Molecular Beam Epitaxy
- Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs
- Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
- Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations : Semiconductors
- High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process
- Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors