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National Defense Acad. Yokosuka Jpn | 論文
- Emission Spectra from Pulsed Discharges in Liquid Helium
- Time-Resolved Spectroscopic Measurerments of Plasmas after Pulsed Discharges in Liquid Helium
- Ionic Conduction and Ultrasonic Velocity in Na_Zr_Mn_x(PO_4)_3
- Electrical Impedance and Elastic Property in Na_2Zr_Mg_(PO_4)_3-Al_2O_3 Composite
- Measurements of Cloud Densities Surrounding Impurity Carbon Pellets
- Electrical Properties of Bromine-Doped Nickel (Phthalocyanine) Films and Their Structural Change : Chemistry (incl. physical process)
- Electrical Properties of Iodine-Doped Nickel (Phthalocyanine) Films
- Power Durability of Al-W Alloy Electrodes Used in RF-Band Surface Acoustic Wave Filters
- Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
- Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
- The Power Durability of 900 MHz Band Double-Mode-Type Surface Acoustic Wave Filters and Improvement in Power Durability of Al-Cu Thin Film Electrodes by Cu Atom Segregation
- Mechanism for Desorption of SiF_4 from an SiO_2 Film Surface in HF Solutions
- Mechanism for Desorption of SiF_4 from SiO_2 Film Surface in HF Solutions
- Mechanochemical Effects of Grinding on the Bi-Pb-Sr-Ca-Cu-O Superconductor
- In Situ Observation of Surface Morphology Evolution Corresponding to Reflection High-Energy Electron Diffraction Oscillation during Molecular Beam Epitaxy of Gallium Arsenide
- In Situ Observation of Monolayer Steps during Molecular Beam Epitaxy of Gallium Arsenide by Scanning Electron Microscopy
- Fabrication of Rectangular Holes along 2×4 Unit Cells on GaAs(001) Reconstructed Surface with a Scanning Tunneling Microscope
- Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy
- Scanning Tunneling Microscopy of (NH_4)_2S_x-Treated GaAs Surfaces Annealed in Vacuum
- Measurement of the Virtual Mass of a Body Using the Second Harmonic Resonance of a Tube