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Nanoelectronics Research Institute Aist | 論文
- Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)
- P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs
- Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication
- Close Observation of the Geometrical Features of an Ultranarrow Silicon Nanowire Device
- Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
- Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
- Quasi-two Dinensional Electronic State of the Antiferromagnet UPtGa_5
- Single Crystal Growth and Structural and Magnetic Properties of the Uranium Ternary Intermetallic Compound UCr_2Si_2(Condensed Matter : Electric Structure, Electical, Magnetic and Optical Properties)
- 12pZA-7 Photomission study of a strongly correlated two-dimensional antiferromagnetic metal Nd_Sr_MnO_3(English Session)
- An Improved Method for Obtaining Single-Phase Sr_2MoO_4 under Controlled Ultralow Oxygen Partial Pressure : Superconductors
- Behaviors of surfactant atoms on Si(001) surface
- Magnetic Property of a Single Crystal UCu_2Ge_2(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Structural Evidence for the Charge Disproportionation of Fe^ in BaFeO_
- Structural Evidence for the Charge Disproportionation of Fe^ in BaFeO
- Electronic Structure of Ni_3AlX_y (X = B, C, H ; 0
- Nesting Properties and Anomalous Band Effect in MgB_2
- Fermi surface properties of ferromagnet UCu2Si2
- Direct Imaging of Local Spin Orientation within Artificial Nanomagnets
- Measurement of eV-Region Pulse Shapes of Neutrons from the KENS Thermal Neutron Source by a Neutron Resonance Absorption Method
- Fabrication of Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Silicon Field Emitters with a Polysilicon Dual Gate