スポンサーリンク
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan | 論文
- Tip-to-Sample Distance Dependence of $dC/dZ$ Imaging in Thin Dielectric Film Measurement
- Correlation Between Surface Topography and Static Capacitance Image of Ultrathin SiO2 Films Evaluated by Scanning Capacitance Microscopy
- Device Design Consideration for $V_{\text{th}}$-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
- Dual-Metal-Gate Transistors with Symmetrical Threshold Voltages Using Work-Function-Tuned Ta/Mo Bilayer Metal Gates
- P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs
- Demonstration and Analysis of Accumulation-Mode Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
- Monitoring Conditions of Cantilever during Conducting Atomic Force Microscopy Spectroscopy Measurements
- Feedback Control System of Cantilever Contact Conditions during Conducting Atomic Force Microscopy Spectroscopy Measurements