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NTT LSI laboratories | 論文
- C-10-1 Fluidic Self-Assembly (FSA)のための微小はんだバンプの作製(C-10.電子デバイス,一般セッション)
- X-Ray Mask Pattern Accuracy Improvement by Superimposing Multiple Exposures Using Different Field Sizes
- Investigation of Edge Plasmas in the Anchor Cell Region of GAMMA 10 : Fluids, Plasmas, and Electric Discharges
- Measurement of End Loss Electrons and Ions from a Hot Ion Plasma in a Tandem Mirror
- Velocity-Space Diffusion of Wave-Heated Electrons in a Mirror Field
- Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
- A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
- Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
- Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
- Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- KFフラックス法によるペロブスカイト型LuAlO_3単結晶の常圧合成
- Hardness and Oxidation Resistance of Perovskite-type Solid Solution of the ScRh_3B-ScRh_3C System
- FOREWORD (Special Section on Analog Technologies in Submicron Era)
- Ultra-Dry Oxidation for Improving the Time-Dependent Dielectric Breakdown Lifetime of Ultra-Thin Silicon Oxide Films
- Ultra-Short Pulse Generators Using Resonant Tunneling Diodes and Their Integration with Antennas on Ceramic Substrates
- Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
- Boron-Carbon Atomic Ratio Dependence on the Hardness and Oxidation Resistance of Solid Solutions of Perovskite-Type Borocarbide YRh_3B_xC_ (O ≦ x ≦ 1)
- R-Dependency of the Hardness Of Perovskite-Type RRh_3B Compounds (R = La, Gd, Lu and Sc) : Structure and Mechanical and Thermal Properties of Condensed Matter
- Solid Solution Range of Boron, Microhardness and Magnetic Properties of the Perovskite-Type GdRh_3B Obtained by Arc-melting Synthesis
- Impurity Diffusion in Silicon Based on the Pair Diffusion Model and Decrease in Quasi-Vacancy Formation Energy. Part Two : Arsenic