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NTT Basic Research Laboratories, NTT Corporation | 論文
- Unpinning of the Fermi level at clean (111)A surfaces of heavily Si-doped In_Ga_As thin films epitaxially grown on InP substrates
- 22aXF-13 LT-STM study of the surface Fermi level position of MBE-grown In_Ga_As on (001) and (111)A oriented InP substrates
- Differential Phase Shift Quantum Key Distribution Using 1.3-μm Up-Conversion Detectors
- Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- 27aVE-11 Investigating the activation barrier between the stable phases of oscillation in an electromechanical resonator
- Nanometrology of Si Nanostructures Embedded in SiO_2 using Scanning Electron Microscopy
- Epitaxy, Modification of Electronic Structures, Overlayer-Substrate Reaction and Segregation in Ferromagnetic Co Films on Se-Treated GaAs(001) Surface
- Resonant Photoemission Spectroscopy of Ga 3d Two-Hole State of GaAs : Condensed Matter: Electronic Properties, etc.
- In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
- Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System
- Optically Detected Cyclotron Resonance by Multichannel Spectroscopy
- Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
- Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
- Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
- Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
- Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field