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Mitsubishi Electric Corp. Hyogo Jpn | 論文
- NIJI-III Compact Superconducting Electron Storage Ring
- Influence of Synchrobetatron Resonance on Low-Energy Injection Beam with a Compact Storage Ring
- Suppression of Rapid Beam Loss at Low Energy by RF Excitation of Betatron Oscillation
- Effects of Increasing Injection Repetition Rate of Low-Energy Injection into a Compact Storage Ring
- Acceptor Concentration Control of P-ZnSe Using Nitrogen and Helium Mixed Gas Plasma
- Planar-Doping of Molecular Beam Epitaxy Grown ZnSe with Plasma-Excited Nitrogen
- Nitrogen Doping of ZnSe and ZnCdSe with the Assistance of Thermal Energy and Photon Energy
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Thickness Dependence of Furnace N_2O-Oxynitridation Effects on Breakdown of Thermal Oxides
- Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)
- CPM2000-72 WOx薄膜の形成過程とその電気及び光学特性
- TiN Thin Film Prepared by Chermical Vapor Deposition Method Using Cp_2Ti(N_3)_2
- Effects of Sputtering Parameters on the Formation of Single-Oriented (002) Ti Film on Si
- Difference in Thermal Degradation Behavior of ZrO_2 and HfO_2 Anodized Capacitors
- Epitaxial Ir Thin Film on (001) MgO Single Crystal Prepared by Sputtering
- Highly Texrured (100) RuO_2/(001) Ru Multilayers Preparedly by Sputtering
- Electrical Properties of HfO_2 Thin Insulating Film Prepared by Anodic Oxidation
- C-Axis-Oriented Ru Thin Fillns Prepared by Sputtering in Ar and O_2 Gas Mixture : Surfaces, Interfaces, and Films
- X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity