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Mitsubishi Electric Co. Ltd. Hyogo Jpn | 論文
- Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1102) substrate using convergent-beam electron diffraction
- Lattice parameter determination of a composition controlled Si_Ge_x layer on a Si (001) substrate using convergent-beam electron diffraction
- Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED
- Site-Specific Studies on X-Ray Magnetic Circular Dichroism at Fe K Edge for Transition-Metal Ferrites
- X-Ray Diffuse Scattering Study of Magnetite by the Valence-Difference Contrast Method
- Proposal of a Next-Generation Super Resolution Technique
- Photolithography System Using Modified Illumination
- Microstructure and Electrical Properties of (Pb, La)(Zr. Ti)O_3 Films Crystallized from Amorphous State by TWO-Step Postdeposition Annealing
- Effects of Pt/SrRuO_3 Top Electrodes on Ferroelectric Properties of Epitaxial(Pb, La)(Zr, Ti)O_3 Thin Films
- Improvement of n-Type Poly-Si Film Properties by Solid Phase Crystallization Method
- Absolute Measurement of Lattice Spacing d(220)in Floating Zone Silicon Crystal
- Absolute Measurement of Lattice Spacing d(220) Silicon Crystal in Floating Zone
- Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
- Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
- Development of Stable a-Si Solar Cells with Wide-Gap a-Si:H i-layers Deposited by an Inert Gas Plasma Treatment Method
- Improvement in a-Si:H Properties by Inert Gas Plasma Treatment
- Practical Simulation of the I-V Curve for Amorphous-Silicon-Based Multijunction Solar Cells after Light Soaking
- Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation