スポンサーリンク
Microelectronics Research Center, SANYO Electric Co., Ltd. | 論文
- Fabrication of Silicon Field Emitter Arrays Integrated with Beam Focusing Lens
- Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
- High-Power 660-nm-Band AlGaInP Laser Diodes with a Small Aspect Ratio for Beam Divergence
- Fabrication of Silicon Field Emitter Arrays with 0.1-μm-Diameter Gate by Focused Ion Beam Lithography
- P-Type Conducting ZnSe and ZnSSe by N2-Gas Doping During Molecular Beam Epitaxy
- P- Type Conducting ZnSe and ZnSSe by N_2-Gas Doping during Molecular Beam Epitaxy
- Elimination of Negative Charge-Up during High Current Ion Implantation (Special Issue on Quarter Micron Si Device and Process Technologies)
- Down to 0.1 μm Pattern Replication in Synchrotron Radiation Lithography
- A Novel Method for Extracting the Coupling Coefficient without a Reference Cell for a Split-Gate Flash EEPROM
- Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors