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Microelectronics Laboratory Samsung Advanced Institute Of Technology | 論文
- Hydrogen-Induced Degradation of Oxygen Plasma Treated Ferroelectric Pb (Zr,Ti)O_3 Capacitor
- Hydrogen-Induced Degradation of Oxygen Plasma Treated Ferroelectric Pb (Zr,Ti) O_3 Capacitor
- Hydrogen-Induced Degradation of Oxygen Plasma Treated Ferroelectric Pb (Zr,Ti) O_3 Capacitor
- Application of Scanning Probe Microscope for Novel Characterization of Ferroelectric Capacitor
- Ferroelectric Properties of Very Thin Pb(Zr_Ti_)O_3 Film Determined by Kelvin Force Microscope
- Application of Scanning Probe Microscope(SPM) for Novel Characterization of Ferrolectric Capacitor
- Electrical properties of BLT thin films prepared by CSD(chemical Solution Deposition)method
- FERROELECTRIC PROPERTIES OF SOL-GEL DERIVED Pb(Zr, Ti)O_3 CAPACITORS GROWN ON IrO_2 ELECTRODE
- Application of Scanning Probe Microscope(SPM)for Novel Characterization of Ferrolectric Capacitor
- Electrical properties of BLT thin films prepared by CSD(chemical Solution Deposition)method
- FERROELECTRIC PROPERTIES OF SOL-GEL DERIVED Pb(Zr, Ti)O_3 CAPACITORS GROWN ON IrO_2 ELECTRODE