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Meiji Univ. Kawasaki | 論文
- EFFECTS OF α-CHLOROHYDRIN ON RAT SPERM MOTIONS IN RELATION TO MALE REPRODUCTIVE FUNCTIONS
- Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
- Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
- Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
- High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
- Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Second-Harmonic Generation from GaP/AlP Multilayers on GaP(111)Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
- New Semiconductor Second-Harmonic Generator Based on Quasi-Phase-Matching for Cavity-Enhanced Fundamental Standing Wave
- Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well
- Testicular Spermatid and Epididymal Sperm Head Counts as an Indicator for Reproductive Toxicity in Rats
- High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
- GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
- GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
- Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates ( Quantum Dot Structures)
- Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
- The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
- Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures
- Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy