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Matsushita Technoresearch Inc. | 論文
- Chemical State Depth Profile for GaAs Surface
- Atomic-Order Planarization of Ultrathin SiO_2/Si(001) Interfaces
- Doping of Trench Side-Walls Using an Arsenic Planar-Type Solid-Diffusion Source (S-D Source) and Analysis of Doping Uniformity by Secondary Ion Mass Spectroscoty (SIMS)
- Preparation of Mixed Oxide Powders in the Systems ZrO_2-M_xO_y and [20CeO_2-80ZrO_2(mol%)]-M_xO_y from Zirconium Sulfated Slurry for the Purification Catalysts of Automotive Emission
- Auto-Doping Phenomena for the InGaAsP Active Layer in DH Structure Grown by LPE
- 507 異種の粒子層を含む二次元粒子集合体への鋼球の衝突
- OS0910 石油系生分解性樹脂の動的圧縮特性に与える温度の影響(OS09-03 材料・構造の衝撃問題3,OS09材料・構造の衝撃問題(2))
- CH_4/N_2 Plasma Etching for Organic Low-k Dielectric Material
- Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled Plasma
- 723 デンプン由来生分解性プラスチックの衝撃圧縮時の温度上昇(機能性材料の衝撃問題,材料・構造の衝撃問題,オーガナイスドセッション9)
- 313 でんぷんベース樹脂の衝撃圧縮特性(材料の衝撃特性,材料・構造の衝撃問題,オーガナイスドセッション9)
- Detection Limits of Trace Elements for Wavelength Dispersive Total X-Ray Fluorescence under High Flux Synchrotron Radiation
- TeGeSnAu Alloys for Phase Change Type Optical Disk Memories