Chemical State Depth Profile for GaAs Surface

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概要

• 論文の詳細を見る

• Angular dependent core-level X-ray photoelectron spectra measurement has been performed for native oxide of single crystal GaAs wafer and proved to be a useful method for obtaining chemical state depth profile near the surface. Metallic arsenic is buried in a growing native oxide layer and stranded at the interface layer of oxide and GaAs substrate.

• 社団法人応用物理学会の論文
• 1984-01-20

著者

• Onuma Takeshi

  Central Research Laboratory Matsushita Electric Industrial Co. Ltd.

• OHMURA Takuichi

  Matsushita Technoresearch, Inc.

• Kohiki Shigemi

  Matsushita Technoresearch Inc.

• OKI Kazue

  Matsushita Technoresearch Inc.

• TSUJII Hiraaki

  Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.

• Ohmura Takuichi

  Matsushita Technoresearch Inc.

• Oki K

  Matsushita Technoresearch Inc.

• Tsujii Hiraaki

  Central Research Laboratory Matsushita Electric Industrial Co. Ltd.

関連論文

• Structural Properties of Silicon Oxide Films Prepared by the RF Substrate Biased ECR Plasma CVD Method
• Properties of Silicon Oxynitride Films Prepared by ECR Plasma CVD Method : Surfaces, Interfaces and Films
• Experimental Correlation between EPD and Electrical Properties in Undoped LEC As-Grown Semi-Insulating GaAs Crystals
• Effects of Ar Ion-Beamn Etching on Gd-Ba-Cu-O Superconducting Thin Films
• Role of Ions and Radical Species in Silicon Nitride Deposition by ECR Plasma CVD Method
• Chemical State Depth Profile for GaAs Surface

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